PNP Darlington Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter breakdown voltage and a 1.2A maximum collector current. Offers a high minimum DC current gain (hFE) of 20000 and a transition frequency of 125MHz. Packaged in a SOT-223-4 case, this component supports a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
PackageSOT-223-4
Current Rating-1.2A
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi PZTA64 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -1.2A |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -30V |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PZTA64 Datasheet
Download the complete datasheet for Onsemi PZTA64 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
