High voltage PNP bipolar junction transistor in a SOT-223-4 package. Features a maximum collector-emitter voltage (VCEO) of 450V and a maximum collector current of 500mA. Offers a minimum current gain (hFE) of 50 and a maximum power dissipation of 1.5W. Operates across a wide temperature range from -65°C to 150°C. Packaged on a 1000-piece tape and reel, this component is lead-free and RoHS compliant.
PackageSOT-223-4
PolarityPNP
Power1.5W
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Technical Specifications
Onsemi PZTA96ST1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 450V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.65mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 450V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PZTA96ST1G Datasheet
Download the complete datasheet for Onsemi PZTA96ST1G to view detailed technical specifications.
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