Reflective photointerrupter featuring a phototransistor output. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. It operates with a 1.7V supply voltage and has a sensing distance of 1.27mm, with a 940nm wavelength. The device is housed in a radial, through-hole package with tin, matte contact plating and a 50µs response time.
PackageRadial
MountingThrough Hole
Power100mW
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Technical Specifications
Onsemi QRD1113 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Contact Plating | Tin, Matte |
| Fall Time | 50000ns |
| Forward Current | 50mA |
| Height | 4.9mm |
| Input Current | 20mA |
| Lead Free | Lead Free |
| Max Collector Current | 300uA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Response Time | 50us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage | 5V |
| Reverse Voltage (DC) | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 1.27mm |
| DC Rated Voltage | 30V |
| Wavelength | 940nm |
| Weight | 0g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QRD1113 Datasheet
Download the complete datasheet for Onsemi QRD1113 to view detailed technical specifications.
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