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NPN Phototransistor, 880nm IR, 30V VCEO, 15mA IC, PLCC, SMT
Onsemi

QSB320FTR

NPN Phototransistor, 880nm IR, 30V VCEO, 15mA IC, PLCC, SMT

Silicon NPN phototransistor for optical sensing, featuring an 880nm wavelength and a 120° viewing angle. This surface mount component is housed in a 2-pin PLCC package, offering a collector-emitter breakdown voltage of 35V and a maximum collector current of 15mA. With a fall time of 8µs and a power dissipation of 165mW, it operates across a temperature range of -55°C to 100°C. The device is RoHS compliant and lead-free, supplied in tape and reel packaging.

PackagePLCC
MountingSurface Mount
PolarityNPN
Power165mW
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Technical Specifications

Onsemi QSB320FTR technical specifications.

General

Package/Case
PLCC
Collector Emitter Breakdown Voltage
35V
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
30V
Fall Time
8us
Lead Free
Lead Free
Lens Style
Flat
Max Collector Current
15mA
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Power Dissipation
165mW
Mount
Surface Mount
Number of Elements
1
Orientation
Top View
Output Power
165mW
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
120°
Wavelength
880nm
Weight
0.1287g

Compliance

RoHS
Compliant

Datasheet

Onsemi QSB320FTR Datasheet

Download the complete datasheet for Onsemi QSB320FTR to view detailed technical specifications.

This datasheet cannot be embedded due to technical restrictions.