Surface mount NPN silicon infrared phototransistor with a 120° viewing angle and 880nm wavelength. Features a 35V collector-emitter breakdown voltage, 15mA max collector current, and 165mW max power dissipation. Operates from -55°C to 100°C and is housed in a PLCC package, supplied on a 2000-piece tape and reel. This lead-free, RoHS compliant component offers a 5V operating supply voltage and 8000ns fall time.
PackagePLCC
MountingSurface Mount
PolarityNPN
Power165mW
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Technical Specifications
Onsemi QSB320TR technical specifications.
General
| Package/Case | PLCC |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8000ns |
| Lead Free | Lead Free |
| Lens Style | Flat |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 15mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Supply Voltage | 5V |
| Orientation | Top View |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 165mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 120° |
| Wavelength | 880nm |
| Weight | 0.1287g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSB320TR Datasheet
Download the complete datasheet for Onsemi QSB320TR to view detailed technical specifications.
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