Surface mount NPN silicon infrared phototransistor with a 120° viewing angle and 880nm wavelength. Features a 35V collector-emitter breakdown voltage, 15mA max collector current, and 165mW max power dissipation. Operates from -55°C to 100°C and is housed in a PLCC package, supplied on a 2000-piece tape and reel. This lead-free, RoHS compliant component offers a 5V operating supply voltage and 8000ns fall time.
PackagePLCC
MountingSurface Mount
PolarityNPN
Power165mW
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Technical Specifications
Onsemi QSB320TR technical specifications.
General
Package/Case
PLCC
Collector Emitter Breakdown Voltage
35V
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
30V
Fall Time
8000ns
Lead Free
Lead Free
Lens Style
Flat
Max Breakdown Voltage
35V
Max Collector Current
15mA
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Power Dissipation
165mW
Mount
Surface Mount
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
120°
Wavelength
880nm
Weight
0.1287g
Compliance
RoHS
Compliant
Datasheet
Onsemi QSB320TR Datasheet
Download the complete datasheet for Onsemi QSB320TR to view detailed technical specifications.
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