Subminiature plastic silicon infrared phototransistor for surface mount applications. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 2mA. Operates within a temperature range of -25°C to 85°C with a 75mW power dissipation. This NPN type component has a 940nm wavelength and a 24° viewing angle, supplied on a 1000-count tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power75mW
Quick Jump:
Technical Specifications
Onsemi QSB363YR technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
15us
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Breakdown Voltage
30V
Max Collector Current
2mA
Max Operating Temperature
85°C
Min Operating Temperature
-25°C
Max Power Dissipation
75mW
Mount
Surface Mount
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
75mW
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
940nm
Weight
0.09g
Compliance
RoHS
Compliant
Datasheet
Onsemi QSB363YR Datasheet
Download the complete datasheet for Onsemi QSB363YR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
