Subminiature plastic silicon infrared phototransistor for surface mount applications. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 2mA. Operates within a temperature range of -25°C to 85°C with a 75mW power dissipation. This NPN type component has a 940nm wavelength and a 24° viewing angle, supplied on a 1000-count tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power75mW
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Technical Specifications
Onsemi QSB363YR technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Max Power Dissipation | 75mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Supply Voltage | 5V |
| Orientation | Top View |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 75mW |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 940nm |
| Weight | 0.09g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSB363YR Datasheet
Download the complete datasheet for Onsemi QSB363YR to view detailed technical specifications.
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