General purpose NPN phototransistor with a 30V collector-emitter breakdown voltage. Features a domed, transparent lens with a 4° viewing angle and 880nm wavelength sensitivity. This through-hole mounted component offers a 5µs fall time and a maximum power dissipation of 100mW, operating within a -40°C to 100°C temperature range. Packaged in bulk, it is RoHS compliant and lead-free.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
Quick Jump:
Technical Specifications
Onsemi QSC112 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
5us
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Input Current
100uA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Output Power
100mW
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
4°
DC Rated Voltage
30V
Wavelength
880nm
Weight
0.1296g
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi QSC112 Datasheet
Download the complete datasheet for Onsemi QSC112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
