NPN phototransistor with 880nm infrared sensitivity, featuring a 30V collector-emitter breakdown voltage and 6mA maximum collector current. This through-hole mounted component offers a 24° viewing angle and a 7µs fall time. Encased in a 5mm radial package with a black, clear domed lens, it operates from 5V and has a power dissipation of 100mW. Suitable for applications within a -40°C to 100°C temperature range, it is lead-free and RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD122 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 7us |
| Lead Free | Lead Free |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 6mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Supply Voltage | 5V |
| Orientation | Top View |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 880nm |
| Weight | 0.284g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSD122 Datasheet
Download the complete datasheet for Onsemi QSD122 to view detailed technical specifications.
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