NPN silicon phototransistor with 880nm wavelength, featuring a 30V collector-emitter breakdown voltage and 25mA maximum collector current. This through-hole component, housed in a 2-pin T-1 3/4 radial package with a domed transparent lens, operates from -40°C to 100°C with 100mW power dissipation. It offers a 24° viewing angle and is supplied on tape and reel, meeting RoHS compliance.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD124A4R0 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 25mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Supply Voltage | 5V |
| Orientation | Top View |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 880nm |
| Weight | 0.284g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSD124A4R0 Datasheet
Download the complete datasheet for Onsemi QSD124A4R0 to view detailed technical specifications.
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