General purpose NPN phototransistor with a TO-18 package. Features a 30V collector-emitter breakdown voltage, 10mA max collector current, and 100mW power dissipation. Operates within a temperature range of -40°C to 100°C. Includes a domed, transparent lens with a 40° viewing angle and 880nm wavelength sensitivity. Through-hole mount design.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD723 technical specifications.
General
| Package/Case | TO-18 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 10mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Supply Voltage | 5V |
| Orientation | Top View |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Viewing Angle | 40° |
| DC Rated Voltage | 30V |
| Wavelength | 880nm |
| Weight | 0g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi QSD723 Datasheet
Download the complete datasheet for Onsemi QSD723 to view detailed technical specifications.
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