The QVE00832 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 20mA. It operates within a temperature range of -55°C to 100°C and has a power dissipation of 150mW. The device is packaged in a rail/Tube format with 50 units per package and is compliant with RoHS regulations. It has a response time of 4us and a wavelength of 940nm.
MountingThrough Hole
Power150mW
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Technical Specifications
Onsemi QVE00832 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 4us |
| Forward Current | 60mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.4V |
| Output Configuration | Phototransistor |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Response Time | 4us |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QVE00832 Datasheet
Download the complete datasheet for Onsemi QVE00832 to view detailed technical specifications.
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