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Technical Specifications
Onsemi QVE00832C technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 4us |
| Forward Current | 60mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Response Time | 4us |
| Reverse Breakdown Voltage | 6V |
| Wavelength | 940nm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi QVE00832C Datasheet
Download the complete datasheet for Onsemi QVE00832C to view detailed technical specifications.
No datasheet is available for this part.