The RB520S30T1 is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius. It has two terminals and is a dual-element device. The diode is made of silicon and has a maximum reverse voltage rating of 30 volts. The device has a maximum power dissipation of 0.2 watts. It is packaged in a R-PDSO-F2 package type.
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Technical Specifications
Onsemi RB520S30T1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Power Dissipation-Max | 0.2 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Onsemi RB520S30T1 Datasheet
Download the complete datasheet for Onsemi RB520S30T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.