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Technical Specifications
Onsemi RF1S50N06LE technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 50A |
| Material | Si |
| Maximum Drain Source Resistance | 22@5VmOhm |
| Typical Gate Charge @ Vgs | 96@10V|57@5VnC |
| Typical Gate Charge @ 10V | 96nC |
| Typical Input Capacitance @ Vds | 2100@25VpF |
| Maximum Power Dissipation | 142000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Onsemi RF1S50N06LE Datasheet
Download the complete datasheet for Onsemi RF1S50N06LE to view detailed technical specifications.
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