N-channel MOSFET with 50V drain-source breakdown voltage and 14A continuous drain current. Features 100mΩ maximum drain-source on-resistance and 4V threshold voltage. Operates with a 20V gate-source voltage and offers a 48W maximum power dissipation. Packaged in a TO-251-3 (I-PAK) through-hole mount with a lead length of 9.65mm. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi RFD14N05 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
100mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
570pF
Lead Free
Lead Free
Lead Length
9.65mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
45ns
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Onsemi RFD14N05 Datasheet
Download the complete datasheet for Onsemi RFD14N05 to view detailed technical specifications.
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