The RFD16N05 is a 50V N-channel MOSFET with a continuous drain current of 16A and a maximum power dissipation of 72W. It features a TO-251-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The RFD16N05 has an input capacitance of 900pF and a gate to source voltage of 20V.
PackageTO-251-3
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi RFD16N05 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 72W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 72W |
| Rds On Max | 47mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi RFD16N05 Datasheet
Download the complete datasheet for Onsemi RFD16N05 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.