N-channel MOSFET transistor featuring 100V drain-to-source breakdown voltage and 40A continuous drain current. Offers a low 40mΩ drain-to-source resistance (Rds On) at a 10V gate-source voltage. This through-hole component operates within a -55°C to 175°C temperature range and has a maximum power dissipation of 160W. RoHS compliant and lead-free, it is packaged in a TO-220AB case.
PackageTO-220AB
Voltage100V
Current40A
Current Rating40A
Quick Jump:
Technical Specifications
Onsemi RFP40N10 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 40A |
| Current | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 16W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi RFP40N10 Datasheet
Download the complete datasheet for Onsemi RFP40N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
