
NPN bipolar junction transistor in SOT-416 package. Features 50V collector-emitter voltage (VCEO) and 50V collector-base voltage (VCBO). Offers a continuous collector current of 100mA and a maximum power dissipation of 125mW. Exhibits a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel, this component is RoHS compliant and halogen-free.
Onsemi S2SC4617G technical specifications.
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Halogen Free | Halogen Free |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 125mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi S2SC4617G to view detailed technical specifications.
No datasheet is available for this part.
