Onsemi
SB80W10T-H
Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 500-BLKBG
PackageTO-251-3
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Technical Specifications
Onsemi SB80W10T-H technical specifications.
General
| Average Rectified Current | 8A |
| Package/Case | TO-251-3 |
| Element Configuration | Dual |
| Forward Current | 8A |
| Lead Free | Lead Free |
| Max Forward Surge Current (Ifsm) | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Leakage Current | 100uA |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 40A |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 40A |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SB80W10T-H Datasheet
Download the complete datasheet for Onsemi SB80W10T-H to view detailed technical specifications.
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