PNP Bipolar Junction Transistor (BJT) in a TO-236-3 (SC-70) 3-lead package. Features a maximum collector current of 500mA, collector-emitter breakdown voltage of 45V, and a transition frequency of 100MHz. Offers a minimum hFE of 250 and a maximum power dissipation of 460mW. Operates within a temperature range of -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageTO-236-3
PolarityPNP
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Technical Specifications
Onsemi SBC807-40WT1G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC807-40WT1G Datasheet
Download the complete datasheet for Onsemi SBC807-40WT1G to view detailed technical specifications.
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