NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 50V collector-base voltage. Offers a continuous collector current of 500mA and a saturation voltage of 700mV. Operates with a minimum hFE of 100 and a transition frequency of 100MHz. This component is RoHS compliant, halogen-free, and designed for automotive applications (AEC-Q101). Packaged in a 10000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
Quick Jump:
Technical Specifications
Onsemi SBC817-16LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector-emitter Voltage-Max
700mV
Continuous Collector Current
500mA
Emitter Base Voltage (VEBO)
45V
Halogen Free
Halogen Free
Height
1.11mm
hFE Min
100
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
100MHz
Width
2.64mm
Compliance
RoHS
Compliant
Datasheet
Onsemi SBC817-16LT3G Datasheet
Download the complete datasheet for Onsemi SBC817-16LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
