NPN bipolar junction transistor in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum hFE of 160 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. This component is RoHS compliant and Halogen Free, supplied on a 10000-unit tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi SBC817-25LT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Continuous Collector Current | 500mA |
| Emitter Base Voltage (VEBO) | 45V |
| Halogen Free | Halogen Free |
| Height | 1.11mm |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC817-25LT3G Datasheet
Download the complete datasheet for Onsemi SBC817-25LT3G to view detailed technical specifications.
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