Dual NPN PNP Bipolar Transistor in SOT-563-6 package, offering 50V Collector-Emitter Voltage (VCEO) and 45V Collector-Emitter Breakdown Voltage. Features a maximum continuous collector current of 100mA, a transition frequency of 100MHz, and a minimum hFE of 200. Operates across a temperature range of -55°C to 150°C with 500mW power dissipation. This RoHS compliant component is supplied on a 4000-piece tape and reel.
Frequency100MHz
PackageSOT-563-6
PolarityNPN, PNP
Power500mW
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Technical Specifications
Onsemi SBC847BPDXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 15nA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC847BPDXV6T1G Datasheet
Download the complete datasheet for Onsemi SBC847BPDXV6T1G to view detailed technical specifications.
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