Dual NPN Bipolar Junction Transistor (BJT) in a SOT-363 package, designed for surface mount applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Operates with a maximum collector-emitter saturation voltage of 600mV and a transition frequency of 100MHz. This component is halogen-free, lead-free, and RoHS compliant, supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-363
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi SBC847CDW1T1G technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC847CDW1T1G Datasheet
Download the complete datasheet for Onsemi SBC847CDW1T1G to view detailed technical specifications.
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