The SBC847CDXV6T1G is a bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a halogen-free, lead-free SOT-563-6 case and is available in tape and reel packaging. It is RoHS compliant and meets the requirements of AEC-Q101 for automotive applications.
PackageSOT-563-6
PolarityNPN
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Technical Specifications
Onsemi SBC847CDXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC847CDXV6T1G Datasheet
Download the complete datasheet for Onsemi SBC847CDXV6T1G to view detailed technical specifications.
No datasheet is available for this part.