
NPN bipolar junction transistor in a SOT-23-3 package, designed for general-purpose amplification and switching applications. Features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. Packaged in a 3000-piece tape and reel, this component is RoHS compliant and halogen-free, operating within a temperature range of -55°C to 150°C.
Onsemi SBC847CLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SBC847CLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
