The SBC856BDW1T3G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It is packaged in a SOT-363-6 package and has a maximum power dissipation of 380mW. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOT-363-6
PolarityPNP
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Technical Specifications
Onsemi SBC856BDW1T3G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC856BDW1T3G Datasheet
Download the complete datasheet for Onsemi SBC856BDW1T3G to view detailed technical specifications.
No datasheet is available for this part.