The SBC856BLT3G is a PNP transistor with a collector-emitter breakdown voltage of 65V and a continuous collector current of 100mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The device is packaged in a SOT-23-3 package and is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi SBC856BLT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.11mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC856BLT3G Datasheet
Download the complete datasheet for Onsemi SBC856BLT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.