The SBC856BWT1G is a PNP transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is lead free and RoHS compliant, packaged in a tape and reel format with 3000 units per package.
PolarityPNP
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Technical Specifications
Onsemi SBC856BWT1G technical specifications.
General
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC856BWT1G Datasheet
Download the complete datasheet for Onsemi SBC856BWT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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