The SBC857BWT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The device is packaged in a SMALL OUTLINE, R-PDSO-G3 package and is lead free and RoHS compliant. The transistor has a transition frequency of 100MHz and is not radiation hardened.
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Technical Specifications
Onsemi SBC857BWT1G technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBC857BWT1G Datasheet
Download the complete datasheet for Onsemi SBC857BWT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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