P-channel Power MOSFET featuring a 100V drain-source voltage and 11A continuous drain current. This single-element, enhancement-mode silicon transistor is housed in a TO-251 IPAK package with through-hole mounting. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 275 mOhm at 10V, and a maximum power dissipation of 1000 mW. Operating temperature range is -55°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Onsemi SFT1345-H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
IPAK
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
2.3
Package Height (mm)
5.5
Seated Plane Height (mm)
8.6
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Gate Threshold Voltage
2.6V
Maximum Drain Source Resistance
275@10VmOhm
Typical Gate Charge @ Vgs
21@10VnC
Typical Gate Charge @ 10V
21nC
Typical Input Capacitance @ Vds
1020@20VpF
Maximum Power Dissipation
1000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
72pF
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi SFT1345-H Datasheet
Download the complete datasheet for Onsemi SFT1345-H to view detailed technical specifications.
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