The SFT1423-E is a single N-channel junction field-effect transistor with a drain to source breakdown voltage of 500V and a continuous drain current of 2A. It features a TO-251-3 package and operates over a temperature range of -55°C to 150°C. The device has a maximum power dissipation of 20W and is lead free and RoHS compliant. The SFT1423-E has a drain to source resistance of 4.9R and a gate to source voltage of 20V.
PackageTO-251-3
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi SFT1423-E technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 4.9R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 4.9R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 7.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SFT1423-E Datasheet
Download the complete datasheet for Onsemi SFT1423-E to view detailed technical specifications.
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