N-Channel Power MOSFET featuring a 600V drain-source breakdown voltage and 1.5A continuous drain current. Offers a low on-resistance of 6.2Ω (typical) and 8.1Ω (maximum) with a 600V drain-source voltage rating. Designed for efficient switching with turn-on delay time of 9.1ns and fall time of 19ns. Housed in a TO-252-3 (DPAK) package, this single-element transistor operates from -55°C to 150°C and supports a maximum power dissipation of 20W. RoHS compliant and lead-free.
Onsemi SFT1440-TL-E technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 6.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 130pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 8.1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 9.1ns |
| Width | 5.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SFT1440-TL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.