The SGH80N60UFDTU is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 195W. The transistor is packaged in a through-hole configuration and is compliant with RoHS regulations. It is not compliant with Reach SVHC regulations.
Current Rating28A
MountingThrough Hole
Power195W
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Technical Specifications
Onsemi SGH80N60UFDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 28A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 195W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 95ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 100V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SGH80N60UFDTU Datasheet
Download the complete datasheet for Onsemi SGH80N60UFDTU to view detailed technical specifications.
No datasheet is available for this part.