Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 80A Current Rating. Features a 2.1V Collector Emitter Saturation Voltage and 160A Max Collector Current. Operates from -55°C to 150°C with 250W Max Power Dissipation. Packaged in TO-264 for through-hole mounting, this RoHS compliant component offers 95ns reverse recovery time and 40ns turn-on delay.
PackageTO-264
Current Rating80A
MountingThrough Hole
Power250W
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Technical Specifications
Onsemi SGL160N60UFDTU technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 80A |
| Height | 26mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20mm |
| Max Collector Current | 160A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 95ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Weight | 6.756g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SGL160N60UFDTU Datasheet
Download the complete datasheet for Onsemi SGL160N60UFDTU to view detailed technical specifications.
No datasheet is available for this part.