Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 23A. This through-hole component offers a low collector-emitter saturation voltage of 2.1V and a maximum power dissipation of 100W. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a TO-220 case and is RoHS compliant. Key switching characteristics include a turn-on delay time of 17ns and a turn-off delay time of 60ns.
PackageTO-220
Current Rating23A
MountingThrough Hole
Power100W
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Technical Specifications
Onsemi SGP23N60UFTU technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Continuous Collector Current | 23A |
| Current Rating | 23A |
| Height | 9.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Collector Current | 23A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | SGP23N60UF |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SGP23N60UFTU Datasheet
Download the complete datasheet for Onsemi SGP23N60UFTU to view detailed technical specifications.
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