Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 23A. This through-hole component offers a low collector-emitter saturation voltage of 2.1V and a maximum power dissipation of 100W. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a TO-220 case and is RoHS compliant. Key switching characteristics include a turn-on delay time of 17ns and a turn-off delay time of 60ns.
PackageTO-220
Current Rating23A
MountingThrough Hole
Power100W
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Technical Specifications
Onsemi SGP23N60UFTU technical specifications.
General
Package/Case
TO-220
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Continuous Collector Current
23A
Current Rating
23A
Height
9.4mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.1mm
Max Collector Current
23A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
100W
Radiation Hardening
No
RoHS Compliant
Yes
Series
SGP23N60UF
Turn-Off Delay Time
60ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi SGP23N60UFTU Datasheet
Download the complete datasheet for Onsemi SGP23N60UFTU to view detailed technical specifications.
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