The SGS23N60UFDTU is a 600V insulated gate bipolar transistor with a collector-emitter saturation voltage of 2.1V and a maximum collector current of 23A. It is packaged in a TO-220-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 73W. The SGS23N60UFDTU is lead-free and RoHS compliant.
PackageTO-220-3
Current Rating12A
MountingThrough Hole
Power73W
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Technical Specifications
Onsemi SGS23N60UFDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 12A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 23A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 73W |
| Radiation Hardening | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Series | SGS23N60 |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SGS23N60UFDTU Datasheet
Download the complete datasheet for Onsemi SGS23N60UFDTU to view detailed technical specifications.
No datasheet is available for this part.