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Technical Specifications
Onsemi SI4463DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -11.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 10mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI4463DY Datasheet
Download the complete datasheet for Onsemi SI4463DY to view detailed technical specifications.
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