Complementary PowerTrench® MOSFET featuring 30V drain-to-source breakdown voltage. This surface mount SOIC package offers a continuous drain current of 6A and a maximum power dissipation of 2W. With a low Rds(on) of 28mΩ at a nominal Vgs of 1.5V, it provides efficient switching with a fall time of 18ns and turn-off delay of 47ns. Designed for demanding applications, it operates across a wide temperature range from -55°C to 175°C and is supplied in a 2500-piece tape and reel.
Onsemi SI4542DY technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SI4542DY to view detailed technical specifications.
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