The SI9426DY is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 10.5A. It has a drain to source resistance of 12mR and a power dissipation of 2.5W. The device is packaged in a SOIC package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a fall time of 40ns and a turn-off delay time of 145ns.
PackageSOIC
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi SI9426DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 12mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 145ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI9426DY Datasheet
Download the complete datasheet for Onsemi SI9426DY to view detailed technical specifications.
No datasheet is available for this part.