The SI9936BDY-T1-E3 is a surface-mount N and P-Channel FET from Onsemi, packaged in a SOIC case. It can handle a maximum drain current of 5A and a drain to source voltage of 30V. The device has a maximum power dissipation of 900mW and an on-resistance of 28 milliohms. The input capacitance is 575 picofarads.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Onsemi SI9936BDY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 575pF |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 28mR |
| Series | PowerTrench® |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI9936BDY-T1-E3 Datasheet
Download the complete datasheet for Onsemi SI9936BDY-T1-E3 to view detailed technical specifications.
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