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Technical Specifications
Onsemi SI9955DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 345pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI9955DY Datasheet
Download the complete datasheet for Onsemi SI9955DY to view detailed technical specifications.
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