Dual PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V. Offers a transition frequency of 250MHz and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel, this component is RoHS compliant and halogen-free.
Frequency250MHz
PackageSOT-363-6
PolarityPNP
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Technical Specifications
Onsemi SMBT3906DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 250MHz |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMBT3906DW1T1G Datasheet
Download the complete datasheet for Onsemi SMBT3906DW1T1G to view detailed technical specifications.
No datasheet is available for this part.