The SMMBFJ177LT1G is a SOT-23-3 packaged junction field-effect transistor from Onsemi. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. The device is lead free and compliant with AEC-Q101. The input capacitance is 11pF and the gate to source voltage is -25V. The device is packaged on tape and reel.
PackageSOT-23-3
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Technical Specifications
Onsemi SMMBFJ177LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Gate to Source Voltage (Vgs) | -25V |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBFJ177LT1G Datasheet
Download the complete datasheet for Onsemi SMMBFJ177LT1G to view detailed technical specifications.
No datasheet is available for this part.
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