PNP bipolar junction transistor in a SOT-23-3 package, offering a 60V collector-emitter voltage (VCEO) and a continuous collector current of -600mA. Features a maximum power dissipation of 300mW, a transition frequency of 200MHz, and a minimum hFE of 50. Operates across a temperature range of -55°C to 150°C and is RoHS compliant. Supplied on a 10000-piece tape and reel.
Frequency200MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi SMMBT2907ALT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.11mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBT2907ALT3G Datasheet
Download the complete datasheet for Onsemi SMMBT2907ALT3G to view detailed technical specifications.
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