The SMMBTA42LT1G is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 500mA. It is packaged in a SOT-23-3 package and has a maximum power dissipation of 300mW. The transistor operates over a temperature range of -55°C to 150°C and is lead-free and RoHS compliant. The SMMBTA42LT1G has a transition frequency of 50MHz.
PackageSOT-23-3
PolarityNPN
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Technical Specifications
Onsemi SMMBTA42LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBTA42LT1G Datasheet
Download the complete datasheet for Onsemi SMMBTA42LT1G to view detailed technical specifications.
No datasheet is available for this part.