Onsemi
SMUN5235DW1T1G
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
PackageSOT-363-6
PolarityNPN
Power187mW
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Technical Specifications
Onsemi SMUN5235DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Direction | Unidirectional |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Min Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 187mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 187mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMUN5235DW1T1G Datasheet
Download the complete datasheet for Onsemi SMUN5235DW1T1G to view detailed technical specifications.
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