Onsemi SNSS20101JT1G technical specifications.
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 220mV |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 350MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SNSS20101JT1G to view detailed technical specifications.
No datasheet is available for this part.