NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 25V. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1W. RoHS compliant and lead-free.
Frequency100MHz
PackageTO-92-3
Current Rating1.5A
MountingThrough Hole
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Technical Specifications
Onsemi SS8050CTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Current Rating
1.5A
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
85
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
25V
Max Collector Current
1.5A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
25V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi SS8050CTA Datasheet
Download the complete datasheet for Onsemi SS8050CTA to view detailed technical specifications.
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