PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a TO-92-3 package for through-hole mounting. This bipolar junction transistor offers a maximum collector current of 1.5A and a collector-emitter voltage of 25V. With a transition frequency of 200MHz and a minimum hFE of 85, it is suitable for high-frequency applications. Operating within a temperature range of -65°C to 150°C, this RoHS compliant component has a power dissipation of 1W.
Frequency200MHz
PackageTO-92-3
Current Rating-1.5A
MountingThrough Hole
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Technical Specifications
Onsemi SS8550DTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -280mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 1.5A |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -25V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS8550DTA Datasheet
Download the complete datasheet for Onsemi SS8550DTA to view detailed technical specifications.
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